《氧化鋯陶瓷制造工藝配方精選》
耐高溫 機(jī)械強(qiáng)度高 耐損耗 超高功率 國(guó)家標(biāo)準(zhǔn)產(chǎn)品
New Technology Of Graphite Materials
國(guó)際新技術(shù)資料網(wǎng) 最新推出
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氧化鋯陶瓷高新技術(shù)！產(chǎn)品應(yīng)用，產(chǎn)品配方 生產(chǎn)工藝技術(shù)。技術(shù)新，環(huán)保，涉及面廣。內(nèi)容涵蓋技術(shù)背景/原理、材料配方比例、制作方法、工藝步驟、結(jié)構(gòu)設(shè)計(jì)圖（部分設(shè)備類有），以及發(fā)明人名稱、地址、郵編、申請(qǐng)日期、專利號(hào)、權(quán)利要求等詳細(xì)信息?。。?nbsp; 想要高技術(shù)配方! 想生產(chǎn)高性能!想降低成本! 想創(chuàng)業(yè)轉(zhuǎn)型! 請(qǐng)訂購(gòu)2021新版《氧化鋯陶瓷制造配方及應(yīng)用新技術(shù)精選》!
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氧化鋯陶瓷高新技術(shù)！產(chǎn)品應(yīng)用，產(chǎn)品配方 生產(chǎn)工藝技術(shù)。技術(shù)新，環(huán)保，涉及面廣。內(nèi)容涵蓋技術(shù)背景/原理、材料配方比例、制作方法、工藝步驟、結(jié)構(gòu)設(shè)計(jì)圖（部分設(shè)備類有），以及發(fā)明人名稱、地址、郵編、申請(qǐng)日期、專利號(hào)、權(quán)利要求等詳細(xì)信息?。。?nbsp; 想要高技術(shù)配方! 想生產(chǎn)高性能!想降低成本! 想創(chuàng)業(yè)轉(zhuǎn)型! 請(qǐng)訂購(gòu)2021新版《氧化鋯陶瓷制造配方及應(yīng)用新技術(shù)精選》!
2021新版《氧化鋯陶瓷制造工藝配方精選》
氧化鋯陶瓷的生產(chǎn)要求制備高純、分散性能好、粒子超細(xì)、粒度分布窄的粉體，氧化鋯超細(xì)粉末的制備方法很多，氧化鋯的提純主要有氯化和熱分解法、堿金屬氧化分解法、石灰熔融法、等離子弧法、沉淀法、膠體法、水解法、噴霧熱解法等。粉體加工方法有共沉淀法、溶膠一凝膠法、蒸發(fā)法、超臨界合成法、微乳液法、水熱合成法網(wǎng)及氣相沉積法等.
在功能陶瓷方面，其優(yōu)異的耐高溫性能作為感應(yīng)加熱管、耐火材料、發(fā)熱元件使用。氧化鋯陶瓷具有敏感的電性能參數(shù)，主要應(yīng)用于氧傳感器、固體氧化物燃料電池(Solid Oxide Fuel Cell, SOFC）和高溫發(fā)熱體等領(lǐng)域。ZrO2具有較高的折射率（N-21^22），在超細(xì)的氧化鋯粉末中添加一定的著色元素（V2O5, MoO3, Fe2O3等），可將它制成多彩的半透明多晶ZrO2材料，像天然寶石一樣閃爍著絢麗多彩的光芒，可制成各種裝飾品。另外，氧化鋯在熱障涂層、催化劑載體、醫(yī)療、保健、耐火材料、紡織等領(lǐng)域正得到廣泛應(yīng)用。
為了配合國(guó)家產(chǎn)業(yè)政策向廣大企業(yè)、科研院校提供的我國(guó)及國(guó)外最新工藝功能陶瓷及耐火制品技術(shù)制造工藝配方專利匯編技術(shù)資料。資料中每個(gè)項(xiàng)目包含了最詳細(xì)的技術(shù)制造 資料,現(xiàn)有技術(shù)問(wèn)題及解決方案、產(chǎn)品生產(chǎn)工藝、配方、產(chǎn)品性能測(cè)試，對(duì)比分析。資料信息量大,實(shí)用性強(qiáng),是從事新產(chǎn)品開(kāi)發(fā)、參與市場(chǎng)競(jìng)爭(zhēng)的必備工具。 本篇匯編資料分為精裝合訂本和光盤(pán)版，內(nèi)容相同，用戶可根據(jù)自己需求購(gòu)買(mǎi)。現(xiàn)貨發(fā)行，歡迎新老客戶選購(gòu)。特快專遞郵寄。資料分為上、下兩冊(cè)，A4紙大，共748頁(yè)現(xiàn)貨發(fā)行，歡迎訂購(gòu)
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極紫外光刻膠（EUV光刻膠）技術(shù)：EUV光刻膠是目前最先進(jìn)的光刻膠技術(shù)之一，主要用于極紫外光刻工藝，能夠?qū)崿F(xiàn)極小的線寬和高分辨率的圖形轉(zhuǎn)移，是制造高端芯片的關(guān)鍵材料例如，JSR公司在2011年就與SEMATECH聯(lián)合開(kāi)發(fā)出用于15nm工藝的化學(xué)放大型EUV光刻膠東京應(yīng)化（TOK）也在EUV光刻膠領(lǐng)域處于領(lǐng)先地位，其在2020年擁有EUV光刻膠51.8%的市占率。
高靈敏度和高分辨率光刻膠技術(shù)：通過(guò)優(yōu)化光刻膠的化學(xué)配方和結(jié)構(gòu)，提高光刻膠對(duì)光的靈敏度和分辨率，從而實(shí)現(xiàn)更小的圖形尺寸和更高的集成度如Inpria生產(chǎn)的包含氧化錫的EUV光刻膠，具有良好的靈敏度，將EUV的吸收效率提升了4倍，并且可以實(shí)現(xiàn)更簡(jiǎn)單的制造流程和更大的工藝窗口。
多層膜光刻技術(shù)：為了進(jìn)一步提高光刻分辨率，采用多層膜光刻技術(shù)，通過(guò)在光刻膠層之間增加特殊的膜層，減少光的反射和散射，提高光刻的對(duì)比度和分辨率。
本資料是收錄涉及《國(guó)際光刻膠制造工藝配方精選匯編》最新專利技術(shù)資料，資料中包括制造原料、配方、生產(chǎn)工藝、產(chǎn)品性能測(cè)試及標(biāo)準(zhǔn)、實(shí)際應(yīng)用效果，技術(shù)指標(biāo)，解決的具體問(wèn)題等等，是企業(yè)提高產(chǎn)品質(zhì)量和發(fā)展新產(chǎn)品的重要、實(shí)用、超值和難得的技術(shù)資料。
【資料內(nèi)容】制造工藝及配方
【資料語(yǔ)種】英文
【項(xiàng)目數(shù)量】56項(xiàng)
【電子版】1680元（PDF文檔 郵件發(fā)送）
目錄
| 序號(hào) | 項(xiàng)目名稱 | 研制單位 |
| 1 | Enhanced Euv Materials, Photoresists And Methods Of Their Use | ROBINSON ALEX P G?[GB] JACKSON ED?[US] O'CALLAGHAN GREGORY?[GB] ROTH JOHN?[US] MCCLELLAND ALEXANDRA?[GB] LADA TOM?[US] POPESCU CARMEN?[GB] |
| 2 | Euv Lithography Using Polymer Crystal-Based Reticles | REKHI SANDEEP WALLING THOMAS JOHN FARRELL PICHUMANI PRADEEP SAILAM |
| 3 | Photoresist Composition For Euv, Method For Manufacturing Same, And Method For Forming Photoresist Pattern Using Same | HONG SUKWON?[KR] HWANG CHAN CUK?[KR] KIM DO WON?[KR] BYEON JIN HWAN?[KR] AHN JAE BOONG?[KR] |
| 4 | Pellicle For Euv Lithography And Method For Manufacturing Pillicle Film Of The Same | PARK CHUL KYUN HONG JU HEE CHOI MUN SU KIM DONG HOI |
| 5 | Pellicle For Euv Lithography | HONG JU-HEE?[KR] PARK CHUL-KYUN?[KR] CHOI MUN-SU?[KR] KIM DONG-HOI?[KR] |
| 6 | Method To Reduce Line Edge Roughness For Euv Photoresist Pattern | WANG XIN-KE?[CN] SHEN ZE-QING?[CN] SINGHA ROY SUSMIT?[IN] MALLICK ABHIJIT BASU?[US] BHUYAN BHASKAR JYOTI?[IN] TANG JIECONG?[SG] SUDIJONO JOHN?[US] SALY MARK?[US] |
| 7 | Enhanced Euv Photoresists And Methods Of Their Use | ROBINSON ALEX P G?[GB] JACKSON EDWARD?[US] ROTH JOHN?[US] LADA TOM?[US] O'CALLAGHAN GREG?[GB] |
| 8 | Organometallic Tin Clusters As Euv Photoresist | LU FENG?[US] |
| 9 | Euv Low Roughness Euv Lithography | WISE RICHARD SHAMMA NADER |
| 10 | Enhanced Euv Photoresist And Methods Of Use Thereof | ROBINSON ALEX P G JACKSON EDWARD ROTH JOHN LADA TOM O 'CALLAGHAN GREG |
| 11 | Pellicle For Euv Lithography | HONG JU HEE JUNG MIN WOOK CHOI MUN SU |
| 12 | Method Of Euv Lithography | CHEN TAI-YU?[TW] KHIVSARA SAGAR DEEPAK?[IN] CHIEN SHANG-CHIEH?[TW] LAM KAI TAK?[SG] YU SHENG-KANG?[TW] |
| 13 | Euv Composition For Semiconductor Euv Lithography And Method For Semiconductor Euv Lithography Using The Same | LEE GEUN SU?[KR] LEE YEONG SEON SEONG YEON HEE KIM SEOK HYUN KIM YOUNG CHAN CHEON JONG HYEON LEE SEUNG HYUK |
| 14 | Pellicle For Euv Lithography Masks And Methods Of Manufacturing Thereof | HSU PEI-CHENG?[TW] SUN TING-PI?[TW] LEE HSIN-CHANG?[TW] |
| 15 | Euv Metal Photoresist As Well As Preparation Method And Application Thereof | WANG SU FANG SHUNONG |
| 16 | Euv Photoresist As Well As Preparation Method And Application Thereof | WANG SU FANG SHUNONG |
| 17 | Euv/Eb Photoresist As Well As Preparation Method And Application Thereof | FANG SHUNONG WANG SU TANG CHEN |
| 18 | Euv Photomask And Manufacturing Method Of The Same | HSU FENG YUAN?[TW] SHEN TRAN-HUI?[TW] HSU CHING-HSIANG?[TW] |
| 19 | Euv Euv Dose Reducing Layers Related Structures And Methods And Systems For Their Manufacture | FATEMEH DAVODI PAUL CHATELAIN CHARLES DEZELAH |
| 20 | Method Of Forming Carbon-Based Spacers For Euv Photoresist Patterns | WANG XINKE SHEN ZEQING ROY SUMEET SINGH MALLIK ABHIJIT BASU BHUYAN BHASKAR JYOTI TANG JIECONG SUDIJONO JOHN SALY MARK |
| 21 | Zirconium-Coated Ultra-Thin, Ultra-Low Density Films For Euv Lithography | LIMA MARCIO D?[US] GRAHAM MARY VIOLA?[US] UEDA TAKAHIRO?[US] |
| 22 | Euv Membrane For Euv Lithography And Manufacturing Method For The Same | YU LAN SEO KYOUNG WON PARK JIN SU YANG SEONG JU HONG SEONG GYU LEE HWA CHOL KIM CHEONG KIM KYOUNG SOO YUN WOO HYUN CHO SANG JIN LEE DONG HOON LEE SO YOON PARK SEONG HWAN KIM YONG SU KANG HONG GU CHOI JAE HYUCK |
| 23 | Euv Euv An Euv Pellicle Frame And An Euv Pellicle Using It | HORIKOSHI JUN?[JP] |
| 24 | Pellicle For Euv Lithography | HONG JU HEE PARK CHUL KYUN CHOI MUN SU KIM DONG HOI |
| 25 | Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene Membrane | KIM YONG KI?[KR] |
| 26 | Euv The Manufacturing Method Of Pellicle For Protecting Euv Photomask Using Reinforeced Pad | KIM YONG KI?[KR] |
| 27 | Euv The Manufacturing Method Of Pellicle For Euv Photomask Using Reinforeced Graphene Membrane | KIM YONG KI?[KR] |
| 28 | Implant Into Euv Metal Oxide Photoresist Module To Reduce Euv Dose | PRASAD RAJESH?[US] LIN YUNG-CHEN?[US] HUANG ZHIYU?[US] WANG FENGLIN?[US] LANG CHI-I?[US] HWANG HOYUNG DAVID?[US] AREVALO EDWIN A?[US] SHIM KYUHA?[US] |
| 29 | Method Of Manufacturing Euv Photo Masks | LEE HSIN-CHANG?[TW] HSU PEI-CHENG?[TW] LIEN TA-CHENG?[TW] WANG TZU YI?[TW] |
| 30 | Blankmask And Photomask For Euv Lithography With Backside Conductive Layer | WOO MI KYUNG PARK MIN KYU YANG CHUL KYU |
| 31 | Euv Euvextreme Ultraviolet Mask And Method For Manufacturing The Same | JANG SUNG WOO LEE SUN PYO JUNG EUI HAN |
| 32 | Euv The Manufacturing Method Of Graphene Membrane Pellicle For Extreme Ultra Violet Lithography | KIM YONG KI?[KR] |
| 33 | Enhanced Euv Photoresist Including A Core Tris(4-Hydroxyphenyl)Methane Group And Having Improved Sensitivity (Photosensitivity), Resolution (Line Width Roughness), Or Both | ROBINSON ALEX P G?[GB] MCCLELLAND ALEXANDRA?[GB] O '' CALLAGHAN GREG?[GB] JACKSON ED?[US] NGUYEN VAN HUY?[GB] MELONI FERNANDA?[IT] |
| 34 | Phase Shift Blank Mask And Photomask For Euv Lithography | KIM YONG-DAE LEE JONG-HWA YANG CHUL KYU |
| 35 | Methods For Making Euv Patternable Hard Masks | WU CHENGHAO TIMOTHY WILLIAM WEIDMAN KATIE NARDI |
| 36 | Pellicle For An Euv Lithography Mask And A Method Of Manufacturing Thereof | CHAO TZU-ANG?[TW] CHENG CHAO-CHING?[TW] WANG HAN?[TW] |
| 37 | Pellicle For Euv Lithography | HONG JU HEE PARK CHUL KYUN CHOI MUN SU KIM DONG HOI |
| 38 | Reflective Mask Blank For Euv Lithography, Mask Blank For Euv Lithography, And Manufacturing Methods Thereof | AKAGI DAIJIRO?[JP] KAWAHARA HIROTOMO?[JP] UNO TOSHIYUKI?[JP] ISHIKAWA ICHIRO?[JP] SAKAKI KENICHI?[JP] |
| 39 | Thin Film For Euv Lithography Mask And Method Of Manufacturing Same | XU BEICHENG LI WEIHAO LI HUANLING LI XINCHANG LIN JINXIANG |
| 40 | Euv Light Generation System And Production Method Of Electronic Device | NISHIMURA YUICHI UENO YOSHIFUMI |
| 41 | Thin Film For Euv Lithography Mask And Method Of Manufacturing Same | SON JUNG-PIL XU BEICHENG LI XINCHANG |
| 42 | Euv Euv Euv Euv-Level Substrate Euv Mask Base Euv Mask And Method Of Manufacturing Same | JI MINGHUA DONG YUHU HUANG ZAOHONG |
| 43 | Euv Photomask And Manufacturing Method Thereof | XUE WENZHANG LIAN DACHENG LI XINCHANG |
| 44 | Pellicle For Euv Lithography With Cnt Film And Method For Forming Film Of The Same | CHOI MUN SU HONG JU HEE PARK CHUL KYUN KIM DONG HOI |
| 45 | Detection Method Of Euv Pellicle Status | LIU YEN-HAO?[TW] WANG SHAO-HUA?[TW] ZHANG ZHENG-HAO?[TW] LIN FAN-CHI?[TW] KUO CHUEH-CHI?[TW] CHEN LI-JUI?[TW] LIU HENG-HSIN?[TW] |
| 46 | Euv The Forming Method Of Graphene For Pellicle Membrane Of Extreme Ultra Violet Lithography | KIM YONG KI?[KR] |
| 47 | Euv The Forming Method Of Graphene Membrane To Have Capping Layer For Pellicle Of Extreme Ultra Violet Lithography | KIM YONG KI?[KR] |
| 48 | Euv Euv Reflection-Type Mask Blank For Euv Lithography Reflection-Type Mask For Euv Lithography And Manufacturing Methods Therefor | AKAGI DAIJIRO?[JP] KAWAHARA HIROTOMO?[JP] SASAKI KENICHI?[JP] ISHIKAWA ICHIRO?[JP] UNO TOSHIYUKI?[JP] |
| 49 | Extreme Ultraviolet Lithography Method And Euv Photomask | LEE CHIEN-MIN?[TW] CHEN YEN-LIANG?[TW] LIN SHY-JAY?[TW] CHEN LEE-FENG?[TW] TAI KUO LUN?[TW] |
| 50 | Phase Shift Blankmask And Photomask For Euv Lithography | PARK MIN-KWANG?[KR] PARK MIN-KYU?[KR] WOO MI-KYUNG?[KR] YANG CHUL-KYU?[KR] KIM YONG-DAE?[KR] |
| 51 | Blankmask For Euv Lithography With Absorbing Film, And Photomask Fabricated With The Same | PARK MIN-KYU?[KR] WOO MI-KYUNG?[KR] PARK MIN-KWANG?[KR] YANG CHUL-KYU?[KR] |
| 52 | Membrane For Euv Lithography | HOUWELING ZOMER SILVESTER?[NL] GHIASI KABIRI MAHNAZ?[NL] GIESBERS ADRIANUS JOHANNES MARIA?[NL] BERGERS LAMBERTUS IDRIS JOHANNES CATHARINA?[NL] |
| 53 | Preferential Infiltration In Lithographic Process Flow For Euv Car Resist | ALVA GABRIELA?[US] HAN ZHEN-XING?[CN] SACHAN MADHUR?[IN] LANG CHI-I?[US] ZHOU LIN?[CN] LIU LEQUN?[US] KAZEM NASRIN?[US] |
| 54 | Enhanced Ultra-Thin, Ultra-Low Density Films For Euv Lithography And Method Of Producing Thereof | LIMA MARCIO D?[US] UEDA TAKAHIRO?[US] |
| 55 | Pellicle For An Euv Lithography Mask And A Method Of Manufacturing Thereof | LIN YUN-YUE?[TW] |
| 56 | Methods And Related Systems For Depositing Euv Sensitive Films | PATEL KISHAN ASHOKBHAI?[IN] TOMCZAK YOANN?[FR] DEZELAH CHARLES?[US] ZYULKOV IVAN?[RU] DE ROEST DAVID KURT?[BE] GIVENS MICHAEL?[US] PIUMI DANIELE?[IT] |
國(guó)際新技術(shù)資料網(wǎng)
北京恒志信科????技發(fā)展有限公?司
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國(guó)際新技術(shù)資料網(wǎng)擁有一支工作態(tài)度認(rèn)真、業(yè)務(wù)基礎(chǔ)扎實(shí)、團(tuán)結(jié)協(xié)作意識(shí)強(qiáng)、專業(yè)技術(shù)水平過(guò)硬的員工隊(duì)伍。我們以質(zhì)量、信譽(yù)、完善的售后服務(wù)為準(zhǔn)則，以優(yōu)質(zhì)的服務(wù)、雄厚的技術(shù)力量、先進(jìn)的情報(bào)手段服務(wù)于廣大客戶。公司和自2000年成立以來(lái)，與有關(guān)科研單位、報(bào)社、信息中心共同合作為近萬(wàn)家企業(yè)單位、科研院校提供了有效的專題資料服務(wù)，得到了廣大的企業(yè)家、科研工作者的好評(píng)。?
國(guó)際新技術(shù)資料網(wǎng)由北京恒志信科技發(fā)展有限責(zé)任公司組建，是專門(mén)致力于企業(yè)經(jīng)濟(jì)信息、科技信息開(kāi)發(fā)、加工整理、市場(chǎng)調(diào)查和信息傳播的專業(yè)化網(wǎng)站，網(wǎng)站發(fā)展宗旨是：致力于我國(guó)信息產(chǎn)業(yè)的建設(shè)，及時(shí)向企業(yè)、科研部門(mén)提供最新的國(guó)際最領(lǐng)先技術(shù)的科技信息情報(bào)，有效服務(wù)于企業(yè)新產(chǎn)品開(kāi)發(fā)、可行性論證和推廣。
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